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Datasheet K4M561633G Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | K4M561633G | 4M x 16Bit x 4 Banks Mobile SDRAM K4M561633G - R(B)N/G/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst |
Samsung semiconductor |
K4M5616 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
K4M561633G | 4M x 16Bit x 4 Banks Mobile SDRAM |
Samsung semiconductor |
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K4M56163PG | 4M x 16Bit x 4 Banks Mobile SDRAM |
Samsung semiconductor |
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K4M56163PE-F1L | 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
Samsung |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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