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K4M513233E-F1L 전자부품 데이터시트



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K4M513233E-F1L  

Samsung
Samsung

K4M513233E-F1L

4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4M513233E - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst len




관련 부품 K4M513233E-F 상세설명

K4M513233E-F75  

  
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4M513233E - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst t



Samsung
Samsung

PDF



K4M513233E-F1H  

  
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4M513233E - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst t



Samsung
Samsung

PDF




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