K4M513233E-F1L
Samsung
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAK4M513233E - M(E)C/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst len
K4M513233E-F75
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAK4M513233E - M(E)C/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst t
Samsung
PDF
K4M513233E-F1H
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAK4M513233E - M(E)C/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst t
Samsung
PDF