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Datasheet K4M513233C Equivalent ( PDF )

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1 K4M513233C   4M x 32Bit x 4 Banks Mobile SDRAM

K4M513233C - S(D)N/G/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 &
Samsung semiconductor
Samsung semiconductor
datasheet K4M513233C pdf

K4M5132 Datasheet ( Hoja de datos ) - resultados coincidentes

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K4M51323PC

Mobile-SDRAM

K4M51323PC-S(D)E/G/C/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • • • • 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1
Samsung semiconductor
Samsung semiconductor
datasheet pdf - Samsung semiconductor
K4M513233C

4M x 32Bit x 4 Banks Mobile SDRAM

K4M513233C - S(D)N/G/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst
Samsung semiconductor
Samsung semiconductor
datasheet pdf - Samsung semiconductor
K4M51323LC-SDN

Mobile-SDRAM

K4M51323LC - S(D)N/G/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full
Samsung semiconductor
Samsung semiconductor
datasheet pdf - Samsung semiconductor


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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