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K4M511533E-YC 전자부품 데이터시트



K4M511533E-YC 전자부품 회로 및
기능 검색 결과



K4M511533E-YC  

Samsung
Samsung

K4M511533E-YC

Mobile-SDRAM

K4M511533E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst le




관련 부품 K4M511533E- 상세설명

K4M511533E-YPC  

  
Mobile-SDRAM

K4M511533E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst



Samsung
Samsung

PDF



K4M511533E-YP  

  
Mobile-SDRAM

K4M511533E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst



Samsung
Samsung

PDF



K4M511533E-Y  

  
Mobile-SDRAM

K4M511533E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst



Samsung
Samsung

PDF



K4M511533E-L  

  
Mobile-SDRAM

K4M511533E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst



Samsung
Samsung

PDF



K4M511533E-F75  

  
Mobile-SDRAM

K4M511533E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst



Samsung
Samsung

PDF



K4M511533E-F1L  

  
Mobile-SDRAM

K4M511533E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst



Samsung
Samsung

PDF




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