파트넘버.co.kr K4E660812B 데이터시트 검색

K4E660812B 전자부품 데이터시트



K4E660812B 전자부품 회로 및
기능 검색 결과



K4E660812B  

Samsung
Samsung

K4E660812B

8M x 8bit CMOS Dynamic RAM with Extended Data Out

K4E660812B, K4E640812B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row




관련 부품 K4E66081 상세설명

K4E660812E  

  
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out

K4E660812E,K4E640812E CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), acce



Samsung semiconductor
Samsung semiconductor

PDF



K4E660812C  

  
8M x 8bit CMOS Dynamic RAM with Extended Data Out

K4E660812C,K4E640812C CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), acce



Samsung
Samsung

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처