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Datasheet K4E640812E Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | K4E640812E | (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out K4E660812E,K4E640812E
CMOS DRAM
8M x 8bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), acce |
Samsung semiconductor |
K4E6408 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
K4E640812E | (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
Samsung semiconductor |
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K4E640812C | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
Samsung |
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K4E640812B | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
Samsung |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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