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K4111 전자부품 데이터시트



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K4111  

Toshiba
Toshiba

K4111

MOSFET ( Transistor ) - 2SK4111

2SK4111 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4111 Switching Regulator Applications Unit: mm • • • • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) L




관련 부품 K41 상세설명

K4123LS  

  
MOSFET ( Transistor ) - 2SK4123LS

www.partnumber.co.kr Ordering number : ENA0826 2SK4123LS SANYO Semiconductors DATA SHEET 2SK4123LS N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process



Sanyo
Sanyo

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K4119LS  

  
MOSFET ( Transistor ) - 2SK4119LS

Ordering number : ENA0830 2SK4119LS SANYO Semiconductors DATA SHEET 2SK4119LS N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process



Sanyo Semicon Device
Sanyo Semicon Device

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K4181  

  
N-Channel Silicon MOSFET

Ordering number : ENA0999 2SK4181 SANYO Semiconductors DATA SHEET 2SK4181 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Avalanche resistan



Sanyo
Sanyo

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K414  

  
MOSFET ( Transistor ) - 2SK414



ETC
ETC

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K4174  

  
Silicon N-channel enhancement MOS FET

Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttieProductnnulifecycleaenstage.dce/ Power MOS FETs This product complies with the R



Panasonic
Panasonic

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K4146  

  
MOS FIELD EFFECT TRANSISTOR

Preliminary Data Sheet 2SK4146 MOS FIELD EFFECT TRANSISTOR Description R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 4



Renesas
Renesas

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