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Datasheet K3911 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1K3911Field Effect Transistor

2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI) 2SK3911 Switching Regulator Applications • • • • • Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low l
Toshiba
Toshiba		transistor


K39 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1K390LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE

LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 • Conserves battery life • Unique manufacturing process • Provides lowest reverse leakage currents • Low impedance at currents specified at 10 mA and below NOMINAL ZENER VOLTAGE Vz @ Iz = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0
Knox Inc
Knox Inc		diode
2K3903N-Channel MOSFET, 2SK3903

2SK3903 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3903 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) • Low leakage current: IDSS = 10
Toshiba Semiconductor
Toshiba Semiconductor		data
3K3911Field Effect Transistor

2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI) 2SK3911 Switching Regulator Applications • • • • • Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low l
Toshiba
Toshiba		transistor
4K3918N-Channel MOSFET, 2SK3918

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3918 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3918 is N-channel MOS FET device that ORDERING INFORMATION PART NUMBER 2SK3918 2SK3918-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK) features a low on-state resistance and excelle
NEC
NEC		data
5K3919N-Channel MOSFET, 2SK3919

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3919 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as
NEC
NEC		data
6K3934N-Channel MOSFET, 2SK3934

2SK3934 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (ƒÎ -MOSVI) 2SK3934 Switching Regulator Applications • • • • Low drain-source ON resistance: R DS (ON) = 0.23ƒ¶ (typ.) High forward transfer admittance: |Yfs| =8.2 S (typ.) Low leakage current: IDSS
Toshiba Semiconductor
Toshiba Semiconductor		data
7K3936N-Channel MOSFET, 2SK3936

2SK3936 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II π-MOS VI) 2SK3936 Switching Regulator Applications Unit: mm • Small gate charge: Qg = 60 nC (typ.) • Fast reverse recovery time: trr = 380 ns (typ.) • Low drain-source ON-resistance: RDS (ON) =
Toshiba
Toshiba		data



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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