K3816
ON Semiconductor
MOSFET ( Transistor ) - 2SK3816Ordering number : EN8054A
2SK3816
N-Channel Power MOSFET
60V, 40A, 26mΩ, TO-262-3L/TO-263-2L
http://onsemi.com
Features
• ON-resistance RDS(on)1=20mΩ(typ.) • Input capacitance Ciss=1780pF(typ.) • 4V drive
Specifications
Absolute Maximum Ratings a
K3831
MOSFET ( Transistor ) - 2SK3831Ordering number : ENN8028
2SK3831
N-Channel Silicon MOSFET
2SK3831 General-Purpose Switching Device
Applications
Features
• Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC Converter. • Avalanche resistance guarantee.
Specifications
Absolute Maximum Rat
Sanyo Semicon Device
PDF
K3870-01
N-CHANNEL SILICON POWER MOSFET2SK3870-01
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Outline Drawings (mm) 200406
TO-220AB
Features High speed switching No secondary breakdown Avalanche-proof
Low on-resistance Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible
Fuji
PDF
K3869
MOSFET ( Transistor ) - 2SK38692SK3869
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3869
Switching Regulator Applications
Unit: mm
• Low drain-source ON-resistance: RDS (ON) = 0.55 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.5 S (typ.) • Low leakage current: ID
Toshiba Semiconductor
PDF