K368
Toshiba Semiconductor
MOSFET ( Transistor ) - 2SK368TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK368
Audio Frequency and High Voltage Amplifier Applications Constant Current Applications
2SK368
Unit: mm
· High breakdown voltage: VGDS = −100 V (min) · High input impedance: IGSS = −1
K3683
Fuji Electric
MOSFET ( Transistor ) - 2SK3683
PRELIM INARY
2SK3683-01MR (500V/0.38Ω/19A)
1) Package
Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche
K3686-01
Fuji Electric
MOSFET ( Transistor ) - 2SK3686-012SK3686-01
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOSFET
200509
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
Applications
Switching regulators U
K3687-01MR
Fuji Electric
MOSFET ( Transistor ) - 2SK3687-01MR2SK3687-01MR
FUJI POWER MOSFET
Super FAP-G Series
200311
N-CHANNEL SILICON POWER MOSFET
Features High speed switching No secondary breadown Avalanche-proof
Low on-resistance Low driving power
Outline Drawings [mm]
TO-220F
Applications
K3689-01
ETC
MOSFET ( Transistor ) - 2SK3689-01
2SK3689-01
FUJI POWER MOSFET
200311
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power
Applications
Switching