K365
Toshiba Semiconductor
MOSFET ( Transistor ) - 2SK365TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK365
For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications
2SK365
Unit: mm
· High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1.0
K3652
Panasonic
N-channel enhancement mode MOSFETThis product complies with the RoHS Directive (EU 2002/95/EC).
Power MOSFETs
2SK3652
N-channel enhancement mode MOSFET
3.3±0.3Product lifecyclennuaen
■ Features • Low on-resistance, low Qg • High avalanche resistance
■ Applications • For PDP • F
K3659
NEC
MOSFET ( Transistor ) - 2SK3659DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3659
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltag