K3473
Toshiba Semiconductor
MOSFET ( Transistor ) - 2SK3473
2SK3473
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3473
Switching Regulator Applications
Unit: mm
• • • •
Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Y
K3442
MOSFET ( Transistor ) - 2SK34422SK3442
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3442
Switching Regulator, DC-DC Converter and Motor Drive Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 28 S (typ.) • Low leaka
Toshiba Semiconductor
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K3418
Silicon N Channel MOS FET2SK3418
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 4.3 mΩ typ.
• Capable of 4 V gate drive • High speed switching
Outline
TO-220AB
D
G
S1 2 3
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain
Renesas
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