K3460
Sanken
N-Channel MOSFET2SK3460
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 150 +20, –10 ± 18 ± 72 35 (Tc = 25ºC) 180 18 150 –55 to +150
(Ta = 25ºC)
External dimensions 1 ...... FM20
Electrical Characteristics
Symbol V(BR) DSS I
K3442
MOSFET ( Transistor ) - 2SK34422SK3442
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3442
Switching Regulator, DC-DC Converter and Motor Drive Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 28 S (typ.) • Low leaka
Toshiba Semiconductor
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K3418
Silicon N Channel MOS FET2SK3418
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 4.3 mΩ typ.
• Capable of 4 V gate drive • High speed switching
Outline
TO-220AB
D
G
S1 2 3
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain
Renesas
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