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2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain-source ON resistance : RDS (ON) = 9.5 mΩ (typ.) z High forward transfer admittance : |Yfs| = 40 S (typ.) z Low leakage
K3100G Series 3.3V Crystal Clock Oscillators TTL/CMOS Compatible Tight Symmetry (45/55%) Available Tri-State Option Available ±100ppm Stability Standard - K3100GC Tighter Stabilities Available ±25ppm Stability:- K3100GA ±50ppm Stability:- K3100GB Case Ground for EMI
2SK3152 Silicon N Channel MOS FET High Speed Power Switching ADE-208-732 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3
2SK3141 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 G REJ03G1070-0400 (Previous: ADE
2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1086-0300 (Previous: ADE-208-734A) Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline
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