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K3N5V(U)1000D-TC 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +3.0V/ single +3.3V • Current consumption Operating : 40mA(Max.) Standby : 30µA(Max.) • Ful
2SK3524-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Ma
Teccor® brand Thyristors Standard Bidirectional SIDACs Kxxx1GL Series RoHS Schematic Symbol Applications Typical application circuit presented in Figure 10 of this data sheet (Typical Metal Halide Ignitor Circuit). Description The Multipulse™ SIDAC is a voltage switch used in MetalHalide lam
K3N5V(U)1000D-TC 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +3.0V/ single +3.3V • Current consumption Operating : 40mA(Max.) Standby : 30µA(Max.) • Ful
SEMICONDUCTOR TECHNICAL DATA General Description The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration. K3519PQ-XH Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor 2000 FE
K3N4C1000D-TC(E) 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operat
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