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Datasheet K315 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | K315 | MOSFET ( Transistor ) - 2SK315 Ordering number:EN1005B
N-Channel Junction Silicon FET
2SK315
FM Tuner Applications
Features
· Ideal for FM tuners in radios, stereos, etc. · Because it is compactly packaged, sets can be made compact. · Small Crss (Crss=0.08pF typ). · High yfs (yfs=12.0ms typ).
Package D |
Sanyo Semiconductor Corporation |
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4 | K3150 | MOSFET ( Transistor ) - 2SK3150 2SK3150(L), 2SK3150(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-750A (Z) 2nd. Edition February 1999 Features
• Low on-resistance R DS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4 4
D
1 1 |
Hitachi Semiconductor |
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3 | K3151 | MOSFET ( Transistor ) - 2SK3151 2SK3151
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1076-0400 (Previous: ADE-208-747B) Rev.4.00 Sep 07, 2005
Features
• Low on-resistance RDS (on) = 11.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS00 |
Renesas Technology |
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2 | K3152 | MOSFET ( Transistor ) - 2SK3152 2SK3152
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-732 (Z) 1st. Edition February 1999 Features
• Low on-resistance R DS = 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
TO–220FM
D
G
1 2 S
1. Gate 2. Drain 3. Source
3 |
Hitachi Semiconductor |
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