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K3113 전자부품 데이터시트



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K3113  

NEC
NEC

K3113

MOSFET ( Transistor ) - 2SK3113

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage ap




관련 부품 K31 상세설명

K3128  

  
MOSFET ( Transistor ) - 2SK3128

2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain-source ON resistance : RDS (ON) = 9.5 mΩ (typ.) z High forward transfer admittance : |Yfs| = 40 S (typ.) z Low leakage



Toshiba Semiconductor
Toshiba Semiconductor

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K319  

  
MOSFET ( Transistor ) - 2SK319



Hitachi Semiconductor
Hitachi Semiconductor

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K3100G  

  
3.3V Crystal Clock Oscillators

K3100G Series 3.3V Crystal Clock Oscillators Œ TTL/CMOS Compatible Tight Symmetry (45/55%) Available Œ Tri-State Option Available Œ ±100ppm Stability Standard - K3100GC Tighter Stabilities Available ±25ppm Stability:- K3100GA ±50ppm Stability:- K3100GB Case Ground for EMI



Champion
Champion

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K3152  

  
MOSFET ( Transistor ) - 2SK3152

2SK3152 Silicon N Channel MOS FET High Speed Power Switching ADE-208-732 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3



Hitachi Semiconductor
Hitachi Semiconductor

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K3141  

  
Silicon N-Channel MOS FET

2SK3141 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 G REJ03G1070-0400 (Previous: ADE



Renesas
Renesas

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K3161  

  
MOSFET ( Transistor ) - 2SK3161

2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1086-0300 (Previous: ADE-208-734A) Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline



Renesas Technology
Renesas Technology

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