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K304 전자부품 데이터시트



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K304  

KODENSHI KOREA CORP
KODENSHI KOREA CORP

K304

Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)

Photocoupler K301 • K302 • K304 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington transistor per a channel. The K301 has one channel in a 4-pin mini-flat SMD package. The K302 has two channels in



K304  

Kesailun Elctronic
Kesailun Elctronic

K304

Silicon N Channel Junction FETs

Silicon N Channel Junction FETs LH03 series of products interconvertible 2SK304 2SK304 D Symbol Applications For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC, electronic switch. Electrical characteristics (Ta=25�



K3047  

Panasonic Semiconductor
Panasonic Semiconductor

K3047

MOSFET ( Transistor ) - 2SK3047

Power F-MOS FETs 2SK3047 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 25ns q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q



K3048  

Panasonic Semiconductor
Panasonic Semiconductor

K3048

MOSFET ( Transistor ) - 2SK3048

Power F-MOS FETs 2SK3048 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contact



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