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K2799 전자부품 데이터시트



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K2799  

Shindengen Electric
Shindengen Electric

K2799

MOSFET ( Transistor ) - 2SK2799

SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2799 (F10F35VX2) 350V 10A OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is




관련 부품 K27 상세설명

K2745  

  
MOSFET ( Transistor ) - 2SK2745

2SK2745 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2745 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 7.0 mΩ (typ.) l High forward transfer admittance : |Yfs| = 50



Toshiba
Toshiba

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K2742  

  
MOSFET ( Transistor ) - 2SK2742

2SK2742 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2742 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.28 Ω (typ.) l High forward transfer admittance : |Yfs| = 3.



Toshiba
Toshiba

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K2741  

  
MOSFET ( Transistor ) - 2SK2741

2SK2741 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK2741 Chopper Regulator, DC−DC Converter and Motor Drive Applications l 4 V gate drive l Low drain−source ON resistance l High forward transfer admittance l Low leakage current l Enhancement−mode : RDS (ON



Toshiba Semiconductor
Toshiba Semiconductor

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K2765-01  

  
MOSFET ( Transistor ) - 2SK2765-01

2SK2765-01 FAP-IIS Series > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maxim



Fuji Electric
Fuji Electric

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K2744  

  
MOSFET ( Transistor ) - 2SK2744

2SK2744 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK2744 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.) • High forward transfer admittance: |Yfs| = 27 S (typ.)



Toshiba
Toshiba

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K2737  

  
MOSFET ( Transistor ) - 2SK2737

2SK2737 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM ADE-208-533B(Z) 3rd. Edition Jun 1998 D G 123 1. Gate 2. Drain 3. Source S 2SK2737 Absolute Maximum Rat



Hitachi Semiconductor
Hitachi Semiconductor

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