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Datasheet K226 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | K226 | Silicon N-Channel Enhancement MOS FET |
 Hitachi |
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| 3 | K2260 | MOSFET ( Transistor ) - 2SK2260 Ordering number:ENN4753
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
N-Channel Silicon MOSFET
2SK2260
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm 2062A
[2SK2260] 4.5 1.6 1.5
1.0 2.5 4.25max
0.4 0.5
32 1.5 3.0
1
0.75
Specifications
A |
 Sanyo Semicon Device |
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| 2 | K2266 | MOSFET ( Transistor ) - 2SK2266 2SK2266
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2266
Chopper Regulator, DC–DC Converter and Motor Drive Applications
Unit: mm
l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 22 mΩ (typ.) l High forward transfer admittance : |Yfs| = 27 S |
 Toshiba Semiconductor |
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| 1 | K2267 | MOSFET ( Transistor ) - 2SK2267 2SK2267
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2267
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON-resistance
: RDS (ON) = 8 mΩ (typ.)
z High forward transfer admittance
: |Yfs| = 60 |
Toshiba Semiconductor |
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