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Datasheet K1181 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 K1181   MOSFET ( Transistor ) - 2SK1181

2SK1181 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS * Tch Tstg Ratings 500 ± 20 ± 13 ± 52 (Tch 150ºC) (Ta = 25ºC) External dimensions 2 ...... FM100 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS VTH Re (yfs) RDS (on) Ciss Coss t on t off 2.0 8.5 13 0.35 2700 350 65
 Sanken electric
Sanken electric		 datasheet K1181 pdf

K1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
K10A60D

600V, 10A, Silicon N Channel MOSFET, TK10A60D

TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications Unit: mm • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (
 Toshiba
Toshiba		 datasheet pdf - Toshiba
K12A50D

TK12A50D

TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS =
Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
K10A50D

TK10A50D

TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.) Low leakage current: ID
 Toshiba
Toshiba		 datasheet pdf - Toshiba


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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