Datasheet JDH3D01FV Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	JDH3D01FV	Diode Silicon Epitaxial Schottky Barrier Type JDH3D01FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01FV ○ For wave detection ¾ Small package 0.22±0.05 1.2±0.05 0.32±0.05 3 0.13±0.05 1. ANODE1 2. CATHODE2 3. CATHODE1/ANODE2 0.8±0.05 Unit: mm 1.2±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Reverse voltag	Toshiba Semiconductor

JDH3D0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
JDH3D01S	Diode Silicon Epitaxial Schottky Barrier Type JDH3D01S TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01S ○ For wave detection ¾ Small package Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rat	Toshiba Semiconductor
JDH3D01FV	Diode Silicon Epitaxial Schottky Barrier Type JDH3D01FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01FV ○ For wave detection ¾ Small package 0.22±0.05 1.2±0.05 0.32±0.05 3 0.13±0.05 1. ANODE1 2. CATHODE2 3. CATHODE1/ANODE2 0.8±0.05 Unit: mm 1.2±0.05 Absolute Maximum Ratings (Ta = 25°C) Character	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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