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Datasheet JCS630 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 14 | JCS630 | N-CHANNEL MOSFET R
JCS630
主要参数 MAIN CHARACTERISTICS
ID VDSS Rdson（@Vgs=10V） Qg
9.0A 200 V 0.4Ω 22nC
封装 Package
N 沟道增强型场效应晶体管 N- CHANNEL MOSFET
用途
高频开关电源 电子镇流器 UPS 电源
APPLICATIONS
High efficiency switch mode power supplies
� |
 JILIN SINO-MICROELECTRONICS |
 |
| 13 | JCS630A | N-CHANNEL MOSFET N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET
JCS630A
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 9.0 A VDSS 200 V Rdson（Vgs=10V） 0.4 Ω Qg 22 nC
APPLICATIONS z High efficiency switch
mode power supplies z Electronic lamp ballasts
based on half bridge z UPS
产品特性
z� |
JILIN SINO-MICROELECTRONICS |
|
| 12 | JCS630B | N-CHANNEL MOSFET R
N 沟道增强型场效应晶体管 N-CHANNEL MOSFET
JCS630V/R/S/B/C/F
主要参数
MAIN CHARACTERISTICS
封装 Package
ID VDSS Rdson （@Vgs=10V） Qg
9.0 A 200 V 0.4 Ω 22 nC
用途
z 高频开关电源 z 电子镇流器 z UPS 电源
APPLICATIONS
z High
efficiency switch mode power suppl |
JILIN SINO-MICROELECTRONICS |
|
| 11 | JCS630BA | N-CHANNEL MOSFET N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET
JCS630A
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 9.0 A VDSS 200 V Rdson（Vgs=10V） 0.4 Ω Qg 22 nC
APPLICATIONS z High efficiency switch
mode power supplies z Electronic lamp ballasts
based on half bridge z UPS
产品特性
z� |
JILIN SINO-MICROELECTRONICS |
|
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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