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Datasheet J304 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | J304 | N-Channel JFETs N-Channel JFETs
J304/305
Vishay Siliconix
PRODUCT SUMMARY
Part Number
J304 J305
VGS(off) (V)
−2 to −6 −0.5 to −3
V(BR)GSS Min (V)
−30 −30
gfs Min (mS)
4.5 3
IDSS Min (mA)
5 1
FEATURES
D Excellent High Frequency Gain: J304, Gps 11 dB (typ) @ 400 MHz
D Very Low Noise: 3.8 dB (typ) |
 Vishay |
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| 6 | J304 | JFET High Frequency Amplifier MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFET High Frequency Amplifier
N–Channel — Depletion
1 DRAIN
3 GATE
2 SOURCE
J304
MAXIMUM RATINGS
Rating
Symbol
Value
Drain – Gate Voltage
Gate–Source Voltage
Gate Current
Total Device Dissipation @ TA = 25°C Derate above 25°C
VDG VGS
IG PD
|
 Motorola Semiconductors |
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| 5 | J304 | N-Channel Silicon Junction Field-Effect Transistor B-60
J304, J305 N-Channel Silicon Junction Field-Effect Transistor
01/99
¥ Mixers ¥ Oscillators ¥ VHF/UHF Amplifiers
Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating
– 3 |
 InterFET |
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| 4 | J304 | N-Channel RF Amplifier J304
J304
N-Channel RF Amplifier
• This device is designed for electronic switching applications such as low ON resistance analog switching.
• Sourced from process 50.
1 TO-92 1. Drain 2. Source 3. Gate
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings* TC=25°C unless otherwise not |
 Fairchild Semiconductor |
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