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Datasheet IXTP7N60P Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IXTP7N60P | PolarHV Power MOSFET Advance Technical Information
PolarHVTM Power MOSFET
N-Channel Enhancement Mode
IXTA 7N60P IXTP 7N60P
VDSS = 600 V = 7 A ID25 RDS(on) ≤ 1.1 Ω
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; |
 IXYS |
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| 1 | IXTP7N60PM | Power MOSFET ( Transistor ) Preliminary Technical Information
PolarTM Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTA7N60PM IXTP7N60PM
VDSS ID25
RDS(on)
= 600V = 4A ≤ 1.1Ω
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
T |
 IXYS Corporation |
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