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Datasheet IXTP50N20P Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 IXTP50N20P   (IXTx50N20P) PolarHT Power MOSFET N-Channel Enhancement Mode

PolarHTTM Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXTQ 50N20P IXTA 50N20P IXTP 50N20P VDSS ID25 RDS(on) = 200 V = 50 A = 60 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ
IXYS Corporation
IXYS Corporation		 datasheet IXTP50N20P pdf

IXTP50N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IXTP50N25T

Trench Gate Power MOSFET

Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode TO-263 (IXTA) IXTA50N25T IXTH50N25T IXTP50N25T IXTQ50N25T VDSS ID25 = = RDS(on) ≤ 250V 50A 50mΩ TO-247 (IXTH) TO-220 (IXTP) G S (TAB) G D S (TAB) G DS (TAB) Symbol VDSS VDGR
 IXYS
IXYS		 datasheet pdf - IXYS
IXTP50N20P

(IXTx50N20P) PolarHT Power MOSFET N-Channel Enhancement Mode

PolarHTTM Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXTQ 50N20P IXTA 50N20P IXTP 50N20P VDSS ID25 RDS(on) = 200 V = 50 A = 60 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ =
 IXYS Corporation
IXYS Corporation		 datasheet pdf - IXYS Corporation
IXTP50N085T

Power MOSFET ( Transistor )

Preliminary Technical Information TrenchMVTM Power MOSFET IXTP50N085T IXTY50N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 V 50 A 23 mΩ TO-220 (IXTP) GD S D (TAB) Symbol VDSS VDGR VGSM ID25 IL IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md W
 IXYS Corporation
IXYS Corporation		 datasheet pdf - IXYS Corporation


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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