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IXTP3N110 전자부품 데이터시트



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기능 검색 결과



IXTP3N110  

IXYS Corporation
IXYS Corporation

IXTP3N110

(IXTx3N1x0) High Voltage Power MOSFETs

High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary Data Sheet VDSS ID25 3A 3A RDS(on) 4.5 Ω 4.0 Ω IXTA/IXTP 3N120 IXTA/IXTP 3N110 1200 V 1100 V Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR




관련 부품 IXTP3N1 상세설명

IXTP3N120  

  
(IXTx3N1x0) High Voltage Power MOSFETs

High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary Data Sheet VDSS ID25 3A 3A RDS(on) 4.5 Ω 4.0 Ω IXTA/IXTP 3N120 IXTA/IXTP 3N110 1200 V 1100 V Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight



IXYS Corporation
IXYS Corporation

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IXTP3N100P  

  
MOSFET ( Transistor )

Polar VHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N100P IXTH3N100P IXTP3N100P VDSS = ID25 = ≤RDS(on) 1000V 3A 4.8Ω TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 1



IXYS
IXYS

PDF



IXTP3N100D2  

  
MOSFET ( Transistor )

Depletion Mode MOSFETs N-Channel IXTA3N100D2 IXTP3N100D2 VDSX ID(on) = > RDS(on) 1000V 3A 6 TO-263 AA (IXTA) Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.



IXYS
IXYS

PDF




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