IXTP3N110
IXYS Corporation
(IXTx3N1x0) High Voltage Power MOSFETs
High Voltage Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt
Preliminary Data Sheet
VDSS
ID25 3A 3A
RDS(on) 4.5 Ω 4.0 Ω
IXTA/IXTP 3N120 IXTA/IXTP 3N110
1200 V 1100 V
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR
IXTP3N120
(IXTx3N1x0) High Voltage Power MOSFETs
High Voltage Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt
Preliminary Data Sheet
VDSS
ID25 3A 3A
RDS(on) 4.5 Ω 4.0 Ω
IXTA/IXTP 3N120 IXTA/IXTP 3N110
1200 V 1100 V
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
IXYS Corporation
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IXTP3N100P
MOSFET ( Transistor )Polar VHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA3N100P IXTH3N100P IXTP3N100P
VDSS = ID25 = ≤RDS(on)
1000V 3A
4.8Ω
TO-263 (IXTA)
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAR EAS
dV/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 1
IXYS
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IXTP3N100D2
MOSFET ( Transistor )Depletion Mode MOSFETs
N-Channel
IXTA3N100D2 IXTP3N100D2
VDSX ID(on)
= >
RDS(on)
1000V 3A
6
TO-263 AA (IXTA)
Symbol
VDSX VGSX VGSM
PD
TJ TJM Tstg
TL TSOLD Md Weight
Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.
IXYS
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