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Datasheet IXTP3N100P Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 IXTP3N100P   MOSFET ( Transistor )

Polar VHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N100P IXTH3N100P IXTP3N100P VDSS = ID25 = ≤RDS(on) 1000V 3A 4.8Ω TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 1
IXYS
IXYS
datasheet IXTP3N100P pdf

IXTP3N1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IXTP3N120

(IXTx3N1x0) High Voltage Power MOSFETs

High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary Data Sheet VDSS ID25 3A 3A RDS(on) 4.5 Ω 4.0 Ω IXTA/IXTP 3N120 IXTA/IXTP 3N110 1200 V 1100 V Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM
IXYS Corporation
IXYS Corporation
datasheet pdf - IXYS Corporation
IXTP3N110

(IXTx3N1x0) High Voltage Power MOSFETs

High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary Data Sheet VDSS ID25 3A 3A RDS(on) 4.5 Ω 4.0 Ω IXTA/IXTP 3N120 IXTA/IXTP 3N110 1200 V 1100 V Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM
IXYS Corporation
IXYS Corporation
datasheet pdf - IXYS Corporation
IXTP3N100P

MOSFET ( Transistor )

Polar VHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N100P IXTH3N100P IXTP3N100P VDSS = ID25 = ≤RDS(on) 1000V 3A 4.8Ω TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 15
IXYS
IXYS
datasheet pdf - IXYS


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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