Datasheet IXTP3N100D2 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXTP3N100D2	MOSFET ( Transistor ) Depletion Mode MOSFETs N-Channel IXTA3N100D2 IXTP3N100D2 VDSX ID(on) = > RDS(on) 1000V 3A 6 TO-263 AA (IXTA) Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.	IXYS

IXTP3N10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXTP3N100P	MOSFET ( Transistor ) Polar VHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N100P IXTH3N100P IXTP3N100P VDSS = ID25 = ≤RDS(on) 1000V 3A 4.8Ω TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 15	IXYS
IXTP3N100D2	MOSFET ( Transistor ) Depletion Mode MOSFETs N-Channel IXTA3N100D2 IXTP3N100D2 VDSX ID(on) = > RDS(on) 1000V 3A 6 TO-263 AA (IXTA) Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Lead Temperature for	IXYS

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