Datasheet IXTP1R6N50P Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXTP1R6N50P	Power MOSFET ( Transistor ) Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTP 1R6N50P IXTY 1R6N50P VDSS ID25 RDS(on) = 500 = 1.6 ≤ 6.5 V A Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 150°C TJ = 25°C t	IXYS

IXTP1R6N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXTP1R6N50P	Power MOSFET ( Transistor ) Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTP 1R6N50P IXTY 1R6N50P VDSS ID25 RDS(on) = 500 = 1.6 ≤ 6.5 V A Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to	IXYS
IXTP1R6N100D2	Depletion Mode MOSFET Preliminary Technical Information Depletion Mode MOSFET IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 VDSX ID(on) RDS(on) = > ≤ 1000V 1.6A 10Ω N-Channel TO-252 (IXTY) G S D (Tab) Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°	IXYS Corporation
IXTP1R6N50D2	Depletion Mode MOSFET Preliminary Technical Information Depletion Mode MOSFET IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 VDSX ID(on) RDS(on) = > ≤ 500V 1.6A 2.3Ω N-Channel TO-252 (IXTY) G S D (Tab) Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C C	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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