IXTP1R6N50D2
IXYS Corporation
Depletion Mode MOSFETPreliminary Technical Information
Depletion Mode MOSFET
IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2
VDSX ID(on)
RDS(on)
= > ≤
500V 1.6A 2.3Ω
N-Channel
TO-252 (IXTY)
G S
D (Tab)
Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ
IXTP1R6N50P
Power MOSFET ( Transistor )Advance Technical Information
PolarHVTM Power MOSFET
N-Channel Enhancement Mode
IXTP 1R6N50P IXTY 1R6N50P
VDSS ID25
RDS(on)
= 500 = 1.6 ≤ 6.5
V A Ω
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL
Test Conditions TJ = 25°C to 150°C TJ = 25°C t
IXYS
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