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Datasheet IXTP180N10T Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IXTP180N10T | Power MOSFET ( Transistor ) TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA180N10T IXTP180N10T
VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ
TO-263 (IXTA)
Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ |
IXYS Corporation |
IXTP180N Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
IXTP180N10T | Power MOSFET ( Transistor ) |
IXYS Corporation |
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IXTP180N085T | Power MOSFET ( Transistor ) |
IXYS Corporation |
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IXTP180N055T | (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET |
IXYS Corporation |
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Número de pieza | Descripción | Fabricantes | |
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