Datasheet IXTP180N055T Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXTP180N055T	(IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 180N055T IXTA 180N055T IXTP 180N055T VDSS ID25 RDS(on) = 55 V = 180 A = 4.0 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 2	IXYS Corporation

IXTP180N0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXTP180N085T	Power MOSFET ( Transistor ) Preliminary Technical Information TrenchMVTM Power MOSFET IXTA180N085T IXTP180N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 180 5.5 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Condition	IXYS Corporation
IXTP180N055T	(IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 180N055T IXTA 180N055T IXTP 180N055T VDSS ID25 RDS(on) = 55 V = 180 A = 4.0 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25	IXYS Corporation

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