Datasheet IXTP160N10T Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXTP160N10T	Power MOSFET ( Transistor ) Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA160N10T IXTP160N10T VDSS = ID25 = RDS(on) ≤ 100 160 7.0 V A mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25	IXYS Corporation

IXTP160N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXTP160N10T	Power MOSFET ( Transistor ) Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA160N10T IXTP160N10T VDSS = ID25 = RDS(on) ≤ 100 160 7.0 V A mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Tes	IXYS Corporation
IXTP160N075T	Power MOSFET ( Transistor ) Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N075T IXTP160N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 160 6.0 V A mΩ Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt P	IXYS Corporation
IXTP160N085T	Power MOSFET ( Transistor ) Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on) 85 V 160 A 6.0 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS V DGR VGSM ID25 IDRMS IDM IAR E AS dv/dt PD TJ	IXYS

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Número de pieza	Descripción	Fabricantes	PDF
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