Datasheet IXTP110N055T Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXTP110N055T	Power MOSFET ( Transistor ) Preliminary Technical Information TrenchMVTM Power MOSFET IXTA110N055T IXTP110N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 110 7.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175	IXYS Corporation

IXTP110N0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXTP110N055P	PolarHT Power MOSFET PolarHTTM Power MOSFET N-Channel Enhancement Mode IXTQ 110N055P IXTA 110N055P IXTP 110N055P VDSS ID25 RDS(on) = 55 V = 110 A = 13.5 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C	IXYS Corporation
IXTP110N055T	Power MOSFET ( Transistor ) Preliminary Technical Information TrenchMVTM Power MOSFET IXTA110N055T IXTP110N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 110 7.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Condition	IXYS Corporation

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