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Datasheet IXTK120N25 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IXTK120N25 | High Current MegaMOSFET Advance Technical Information
High Current MegaMOSTMFET
N-Channel Enhancement Mode
IXTK 120N25
VDSS ID25
RDS(on)
= 250 V = 120 A = 22 mΩ
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test conditions TJ = 25°C to 150°C TJ = 25° |
 IXYS Corporation |
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| 1 | IXTK120N25P | PolarHT Power MOSFET
PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTK 120N25P
VDSS = 250 V ID25 = 120 A RDS(on) ≤ 24 m Ω
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25° C to 175° C TJ = 25° C to |
IXYS Corporation |
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