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Datasheet IXTK120N20P Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 IXTK120N20P   PolarHT Power MOSFET

Advanced Technical Information PolarHT Power MOSFET TM IXTQ 120N20P IXTK 120N20P VDSS = 200 V ID25 = 120 A RDS(on) ≤ 22 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.)
 IXYS
IXYS		 datasheet IXTK120N20P pdf

IXTK120N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IXTK120N25P

PolarHT Power MOSFET

PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTK 120N25P VDSS = 250 V ID25 = 120 A RDS(on) ≤ 24 m Ω Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175
 IXYS Corporation
IXYS Corporation		 datasheet pdf - IXYS Corporation
IXTK120N25

High Current MegaMOSFET

Advance Technical Information High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 120N25 VDSS ID25 RDS(on) = 250 V = 120 A = 22 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test conditions TJ = 25°C
 IXYS Corporation
IXYS Corporation		 datasheet pdf - IXYS Corporation
IXTK120N20P

PolarHT Power MOSFET

Advanced Technical Information PolarHT Power MOSFET TM IXTQ 120N20P IXTK 120N20P VDSS = 200 V ID25 = 120 A RDS(on) ≤ 22 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weigh
 IXYS
IXYS		 datasheet pdf - IXYS


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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