Datasheet IXTH7P50 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXTH7P50	Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS(on) Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 7P50 IXTH 8P50 -500V -7 A 1.5 Ω -500V -8 A 1.2 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous	IXYS Corporation

IXTH7 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXTH76N25T	Power MOSFETs Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode TO-263 (IXTA) IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T VDSS ID25 = = RDS(on) ≤ 250V 76A 39mΩ Typical avalanche BV = 300V TO-262 (IXTI) TO-220 (IXTP) TO-247 (IXTH) G S	IXYS
IXTH76P10T	Power MOSFETs TrenchPTM Power MOSFETs IXTA76P10T IXTP76P10T IXTH76P10T D VDSS ID25 RDS(on) = = ≤ - 100V - 76A 25mΩ P-Channel Enhancement Mode Avalanche Rated G TO-263 AA (IXTA) G S S D (Tab) TO-220AB (IXTP) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weigh	IXYS
IXTH75N15	High Current Power MOSFET High Current Power MOSFET N-Channel Enhancement Mode IXTH 75N15 IXTT 75N15 VDSS ID25 RDS(on) = 150 V = 75 A = 23 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Cont	IXYS

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Número de pieza	Descripción	Fabricantes	PDF
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