Datasheet IXTH6N90A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXTH6N90A	Standard Power MOSFET Standard Power MOSFET VDSS IXTH / IXTM 6N90 IXTH / IXTM 6N90A 900 V 900 V ID25 6A 6A RDS(on) 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC =	IXYS Corporation

IXTH6N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXTH6N50D2	Depletion Mode MOSFET Preliminary Technical Information Depletion Mode MOSFET IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 VDSX ID(on) RDS(on) = > ≤ 500V 6A 500mΩ N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C Continu	IXYS Corporation
IXTH6N100D2	Depletion Mode Preliminary Technical Information Depletion Mode MOSFET IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 VDSX ID(on) RDS(on) = > ≤ 1000V 6A 2.2Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C Cont	IXYS
IXTH6N120	High Voltage Power MOSFET High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet IXTH 6N120 IXTT 6N120 VDSS ID25 RDS(on) = 1200 V = 6A = 2.6 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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