IXTH50N20
IXYS Corporation
MegaMOS FET
MegaMOSTMFET
IXTH 50N20 IXTM 50N20
VDSS = 200 V = 50 A ID25 RDS(on) = 45 mΩ
N-Channel Enhancement Mode
Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M
IXTH50N25T
Trench Gate Power MOSFETPreliminary Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode
TO-263 (IXTA)
IXTA50N25T IXTH50N25T IXTP50N25T IXTQ50N25T
VDSS ID25
= =
RDS(on) ≤
250V 50A 50mΩ
TO-247 (IXTH)
TO-220 (IXTP)
G
S (TAB)
G
D
S
(TAB)
G
DS
(TAB)
Symbol VDSS VDGR VGSM ID25 IDM IAS E
IXYS
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