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Datasheet IXTH48N20 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 IXTH48N20   Power MOSFET ( Transistor )

Advance Technical Information Standard Power MOSFET N-Channel Enhancement Mode IXTH 48N20 VDSS = 200 V ID (cont) = 48 A RDS(on) = 50 mΩ Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Contin
 IXYS
IXYS		 datasheet IXTH48N20 pdf

IXTH48 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IXTH48N65X2

Power MOSFET ( Transistor )

X2-Class Power MOSFET Preliminary Technical Information IXTH48N65X2 VDSS = ID25 = RDS(on) 650V 48A 65m N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to
 IXYS
IXYS		 datasheet pdf - IXYS
IXTH48P20P

Polar3 Power MOSFET

Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH48P20P IXTT48P20P VDSS ID25 RDS(on) = = ≤ - 200V - 48A 85mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test
 IXYS Corporation
IXYS Corporation		 datasheet pdf - IXYS Corporation
IXTH48N20

Power MOSFET ( Transistor )

Advance Technical Information Standard Power MOSFET N-Channel Enhancement Mode IXTH 48N20 VDSS = 200 V ID (cont) = 48 A RDS(on) = 50 mΩ Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C;
 IXYS
IXYS		 datasheet pdf - IXYS


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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