Datasheet IXTH3N100P Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXTH3N100P	MOSFET ( Transistor ) Polar VHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N100P IXTH3N100P IXTP3N100P VDSS = ID25 = ≤RDS(on) 1000V 3A 4.8Ω TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 1	IXYS

IXTH3N1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXTH3N100P	MOSFET ( Transistor ) Polar VHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N100P IXTH3N100P IXTP3N100P VDSS = ID25 = ≤RDS(on) 1000V 3A 4.8Ω TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 15	IXYS
IXTH3N120	High Voltage Power MOSFETs High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary Data Sheet IXTH 3N120 V DSS I D25 VDS(on) = 1200 V = 3A = 4.5 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditio	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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