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Datasheet IXTH30N50P Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 IXTH30N50P   PolarHV Power MOSFET

Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement ModeAvalanche Rated IXTH 30N50P IXTT 30N50P IXTQ 30N50P IXTV 30N50P IXTV 30N50PS VDSS ID25 RDS(on) = 500 V = 30 A = 200 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ
 IXYS
IXYS		 datasheet IXTH30N50P pdf

IXTH30N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IXTH30N60L2

Power MOSFET ( Transistor )

Preliminary Technical Information Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode Avalanche rated IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 VDSS ID25 RDS(on) = 600V = 30A ≤ 240mΩ TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD
 IXYS
IXYS		 datasheet pdf - IXYS
IXTH30N50P

PolarHV Power MOSFET

Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement ModeAvalanche Rated IXTH 30N50P IXTT 30N50P IXTQ 30N50P IXTV 30N50P IXTV 30N50PS VDSS ID25 RDS(on) = 500 V = 30 A = 200 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR
 IXYS
IXYS		 datasheet pdf - IXYS
IXTH30N60P

PolarHV Power MOSFET

Advanced Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS VDSS ID25 = 600 V = 30 A RDS(on) ≤ 240 mΩ Symbol VDSS VDGR VGSS VGSM ID25
 IXYS
IXYS		 datasheet pdf - IXYS


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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