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Datasheet IXTH30N50 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IXTH30N50 | MegaMOS FET
MegaMOSTMFET
N-Channel Enhancement Mode
IXTH 30N50
VDSS = 500 V 30 A ID (cont) = RDS(on) = 0.17 Ω
Symbol V DSS V DGR VGS VGSM ID25 IDM PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 2 |
 IXYS Corporation |
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| 1 | IXTH30N50P | PolarHV Power MOSFET Advance Technical Information
PolarHVTM Power MOSFET
N-Channel Enhancement ModeAvalanche Rated
IXTH 30N50P IXTT 30N50P IXTQ 30N50P IXTV 30N50P IXTV 30N50PS
VDSS ID25
RDS(on)
= 500 V = 30 A = 200 mΩ
TO-3P (IXTQ)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ |
 IXYS |
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