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Datasheet IXTH200N10T Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IXTH200N10T | Power MOSFET ( Transistor ) TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH200N10T IXTQ200N10T
Symbol VDSS VDGR
VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL
Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse w |
IXYS Corporation |
IXTH200N Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
IXTH200N10T | Power MOSFET ( Transistor ) |
IXYS Corporation |
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IXTH200N085T | Power MOSFET ( Transistor ) |
IXYS Corporation |
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IXTH200N075T | Power MOSFET ( Transistor ) |
IXYS Corporation |
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Número de pieza | Descripción | Fabricantes | |
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