Datasheet IXTH16P20 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXTH16P20	Standard Power MOSFET Advance Technical Information Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 16P20 VDSS ID25 RDS(on) = -200 V = -16 A = 0.22 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M�	IXYS Corporation

IXTH16 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXTH160N10T	Power MOSFET ( Transistor ) Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH160N10T IXTQ160N10T VDSS = ID25 = RDS(on) ≤ 100 160 7.0 V A mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Tes	IXYS Corporation
IXTH16N20D2	Depletion Mode MOSFET Preliminary Technical Information Depletion Mode MOSFET IXTH16N20D2 IXTT16N20D2 VDSX ID(on) RDS(on) = > ≤ 200V 16A 73mΩ N-Channel TO-247 (IXTH) Symbol VDSX VDGX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS =	IXYS
IXTH16P60P	Power MOSFET ( Transistor ) Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH16P60P IXTT16P60P RDS(on) VDSS ID25 = = ≤ - 600V - 16A 720mΩ TO-268 (IXTT) G S D (TAB) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md	IXYS

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