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Datasheet IXTH14N100 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 IXTH14N100   MegaMOSTMFET

IXTH 14N100 VDSS MegaMOSTMFET N-Channel Enhancement Mode ID25 RDS(on) = 1000 V = 14 A = 0.82 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by
 IXYS Corporation
IXYS Corporation		 datasheet IXTH14N100 pdf

IXTH14N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IXTH14N100

MegaMOSTMFET

IXTH 14N100 VDSS MegaMOSTMFET N-Channel Enhancement Mode ID25 RDS(on) = 1000 V = 14 A = 0.82 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pu
 IXYS Corporation
IXYS Corporation		 datasheet pdf - IXYS Corporation
IXTH14N80

MegaMOS MFET

MegaMOSTMFET N-Channel Enhancement Mode IXTH 14N80 VDSS = 800 V ID25 = 14 A RDS(on) = 0.70 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 IDM PD TJ TJM Tstg TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C
 IXYS
IXYS		 datasheet pdf - IXYS


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