IXTH12N120
Power MOSFET ( Transistor )Power MOSFET, Avalanche Rated High Voltage
Preliminary Data Sheet
IXTH 12N120
VDSS = 1200 V
ID (cont) = 12 A
RDS(on)=
1.4 Ω
Symbol Test Conditions
VDSS VDGR
VGS VGSM
ID25 IDM IAR
EEAARS
PD
TJ TJM Tstg
Md
Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient
TC
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IXTH12N65X2
Power MOSFET ( Transistor )Preliminary Technical Information
X2-Class Power MOSFET
N-Channel Enhancement Mode
IXTA12N65X2 IXTP12N65X2 IXTH12N65X2
VDSS = ID25 = RDS(on)
650V 12A 300m
TO-263 AA (IXTA)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
FMCd Weight
Test Conditions
TJ = 25C to
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IXTH12N100
(IXTH10N100 / IXTH12N100) MegaMOS FET
MegaMOSTMFET
IXTH / IXTM 10N100 IXTH / IXTM 12N100
VDSS 1000 V 1000 V
ID25 10 A 12 A
RDS(on) 1.20 Ω 1.05 Ω
N-Channel Enhancement Mode
Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Co
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