Datasheet IXTH12N120 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXTH12N120	Power MOSFET ( Transistor ) Power MOSFET, Avalanche Rated High Voltage Preliminary Data Sheet IXTH 12N120 VDSS = 1200 V ID (cont) = 12 A RDS(on)= 1.4 Ω Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EEAARS PD TJ TJM Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC	IXYS

IXTH12N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXTH12N65X2	Power MOSFET ( Transistor ) Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTA12N65X2 IXTP12N65X2 IXTH12N65X2 VDSS = ID25 = RDS(on) 650V 12A 300m TO-263 AA (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Condi	IXYS
IXTH12N100	(IXTH10N100 / IXTH12N100) MegaMOS FET MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS 1000 V 1000 V ID25 10 A 12 A RDS(on) 1.20 Ω 1.05 Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150	IXYS Corporation
IXTH12N50	12 AMPS/ 450-500V/ 0.4OM/0.5OM	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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