Datasheet IXTF1N400 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXTF1N400	High Voltage Power MOSFET High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTF1N400 Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limi	IXYS

IXTF1N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXTF1N450	High Voltage Power MOSFET High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTF1N450 VDSS ID25 RDS(on) = 4500V = 0.9A  80 ISOPLUS i4-PakTM Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25C to 150C TJ =	IXYS
IXTF1N400	High Voltage Power MOSFET High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTF1N400 Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25	IXYS

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Número de pieza	Descripción	Fabricantes	PDF
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